Datenpaket: Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells

(Abstract) Data to reproduce the figures of the publication: M. Meyer, T. Fähndrich, S. Schmid, A. Wolf, S. S. Krishtopenko, B. Jouault, G. Bastard, F. Teppe, F. Hartmann , and S. Höfling, Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells, Phys. Rev. B 109, L121303 (2024), DOI: 10.1103/PhysRevB.109.L121303. This study demonstrates the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The findings pave the way for utilizing a different electro-optical tuning scheme to manipulate InAs/GaSb bilayer quantum wells to obtain trivial-topological insulating interfaces in the bulk rather than at the physical edge of the device. Please read the 'README' file.

M.M., F.H., S.K., and S.H. acknowledge financial support by the German Research Foundation (DFG) under Germany's Excellence Strategy–EXC2147 “ct.qmat” (project id 390858490). S.S., F.H. and S.H. acknowledge financial support Elite Network of Bavaria within the graduate program “Topological Insulators”. S.K., B.J and F.T acknowledge financial support by the Occitanie region through the 406 program “Quantum Technologies Key Challenge” (TARFEP 407 project) and French Agence Nationale pour la Recherche (ANR) with Equipex+ Hybat (Grant No. ANR-21-ESRE-0026) project.